Glen D. Via

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The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and(More)
Strategies aimed at improving the near junction heat removal of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are presently limiting GaN device technology from realization of its true capability [1]. Approximately ten years ago, Cree demonstrated AlGaN/GaN HEMTs with power densities exceeding 40 W/mm [2]. Control of the GaN junction(More)
We report recent progress on GaN-on-diamond high-electron-mobility transistors (HEMTs) fabricated by low-temperature device transfer. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. The resulting GaN-on-diamond HEMTs demonstrated(More)
In this work, we compare for the first time the performance results of AlGaN/GaN HEMTs processed on a free-standing chemical vapor deposition (CVD) polycrystalline diamond substrate and a silicon substrate with nominally the same epitaxial AlGaN/GaN layers both grown by metal-organic chemical vapor deposition (MOCVD). The objective of this work is to(More)
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