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Reducing energy consumption in datacenters is key to building low cost datacenters. To address this challenge, we explore the potential of hybrid datacenter designs that mix low power platforms with high performance ones. We show how these designs can handle diverse workloads with different service level agreements in an energy efficient fashion. We(More)
The yield of adiabatic circuits strongly depends on the effects of parameter variations on the power dissipation. The dispersion of the threshold voltage has the most important impact on the yield. Different effects on the energy consumption due to interdie and intra-die variations of the threshold voltage are presented. Three logic families, the Efficient(More)
—The customer domain of the smart grid naturally blends with smart home and smart building systems, but typical proposed approaches are " distributor-centric " rather than " customer-centric, " undermining user acceptance, and are often poorly scalable. To solve this problem, we propose a detailed architecture and an implementation of a " last-meter " smart(More)
We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the second quantization formalism and allows to include both the effects of Pauli exclusion and Coulomb repulsion among(More)
The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond(More)
—We present the design of the RF section of a long range passive RFID transponder, consisting of a voltage multiplier and a voltage regulator, that convert the RF signal into a regulated DC supply voltage, a PWM demodulator and a PSK backscatter modulator. The entire circuit has been designed with AMS 0.35 µm BiCMOS technology. Post-layout simulations show(More)
We propose that lateral heterostructures of single-atomic-layer graphene and hexagonal boron-carbon-nitrogen (hBCN) domains, can represent a powerful platform for the fabrication and the technological exploration of real two-dimensional field-effect transistors. Indeed, hBCN domains have an energy bandgap between 1 and 5 eV, and are lattice-matched with(More)