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A heterojunction bipolar transistor (HBT) technology utilizing InGaP/GaAs and carbon-doped base has been established in Motorola's high-volume 6" GaAs facility. The technology has been used to develop an integrated dual band (824-849 MHz and 1850-1910 MHz) power amplifier IC with multi-mode operation for 2.5G portable wireless. Both three-stage amplifiers(More)
The paper presents a novel protection circuit for power amplifier (PA) ruggedness improvement. This protection circuit is a monolithically integrated, cost and size effective, collector current limiter, indexed to the supply voltage. Compared with conventional protection circuits, the current threshold is indexed to the supply voltage and the protection(More)
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