Gianmauro Pozzovivo

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InAlN/GaN HEMTs have been proposed to provide higher polarization charges without the drawback of high strain [1]. Several groups have demonstrated devices based on InAlN/GaN ([2], [3]), with maximum current capabilities surpassing those of AlGaN/GaN structures. For further optimization a reliable simulation tool is needed. Our two-dimensional device(More)
While AlGaN quantum cascade electro-optic devices recently received particular interest, the behavior of such vertical devices is not well understood and their performance greatly lags behind that of horizontal devices. The RTD is a benchmark for any such quantum cascade/intersubband (ISB) device. While epitaxial quality of InGaN/AlGaN could be improved so(More)
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