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This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -146 dBc/Hz, which satisfies the global system for mobile(More)
This paper reports on the design, fabrication and testing of novel one and two port piezoelectric higher order contour-mode MEMS resonators that can be employed in RF wireless communications as frequency reference elements or arranged in arrays to form banks of multi-frequency filters. The paper offers a comparison of one and two port resonant devices(More)
This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5 to 20 V), facilitates active(More)
This paper reports on a new class of high-Q single-crystal silicon (SCS) resonators that are piezoelectrically actuated and sensed, and have voltage-tunable center frequencies. The resonating element is made out of the SCS device layer of a SOI wafer. In a unique manner, piezoelectric transduction was integrated with capacitive fine-tuning of the resonator(More)
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— We present a two-dimensional, vision-based force sensor, capable of sensing µN level forces. There are currently no reliable, off-the-shelf, commercially-available force sensors to measure forces at this scale, that can be easily integrated into standard microrobotic test-beds. Our design consists of a planar, elastic mechanism with known force-deflection(More)
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the(More)
This paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an ntype and p-type (complementary) device. Body-biasing also gives the ability to(More)
In this paper, we present the first demonstration of the monolithic integration of Aluminum Nitride (AlN) micromechanical contour mode technology filters with dual-beam actuated MEMS AlN switches. This integration has lead to the development of the first prototype of a fully-integrated all-mechanical switchable filter. Integration has been demonstrated by(More)
This paper reports on a new class of high-Q single crystal silicon (SCS) resonators that are piezoelectrically actuated and sensed, and have voltage-tunable center frequencies. The resonating element is made out of the SCS device layer of a SOI wafer. In a unique manner, piezoelectric transduction was integrated with capacitive fine-tuning of the resonator(More)