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800V lateral IGBT in bulk Si for low power compact SMPS applications
An 800V rated lateral IGBT for high frequency, low-cost off-line applications has been developed. The LIGBT features a new method of adjusting the bipolar gain, based on a floating N+ stripe in frontExpand
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On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN highExpand
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Superjunction IGBT vs. FS IGBT for 200°C operation
Adverse effects on the temperature-dependent properties of Insulated Gate Bipolar Transistors (IGBTs) are often observed when the junction temperature exceeds 175°C. It is believed that attempts inExpand
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Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters
This paper describes a method to extract the ideality factor, barrier height and series resistance of a lateral AlGaN/GaN heterostructure power Schottky diode using a simple I-V measurement inExpand
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On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN powerExpand
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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison
Similarly to the unipolar SiC Schottky diodes, AlGaN/GaN Schottky devices have been suggested to have a negligible reverse recovery current during turn-off and can therefore be switched at very highExpand
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Avalanche ruggedness of 800V Lateral IGBTs in bulk Si
Avalanche capability of 800V rated Lateral IGBTs (LIGBTs) fabricated using bulk CMOS technology has been investigated for the first time for both turn-on and turn-off. The LIGBTs have been designedExpand
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Field-stop layer optimization for 1200V FS IGBT operating at 200˚C
This paper is concerned with design considerations for enabling the operation of Field-Stop Insulated Gate Bipolar Transistors (FS IGBTs) at 200 C. It is found that through a careful optimization ofExpand
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The Effect of Incomplete Ionization on the Turn-Off Behavior of FS IGBTs
This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gateExpand
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On the vertical leakage of GaN-on-Si lateral transistors and the effect of emission and trap-to-trap-tunneling through the AIN/Si barrier
Vertical leakage in lateral GaN devices has a significant contribution to the overall off-state current at high blocking voltages and high temperatures. It could could lead to premature breakdownExpand
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