Gian-Franco Dalla Betta

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In this paper a comparative review of three image sensors fabricated in a 0.18µm CMOS imaging technology [1-3] and conceived for TOF range imaging is given. Two of them exploit in-pixel electro-optic demodulating detectors, while the third one is based on a switched capacitor pixel approach using a standard photodiode. INTRODUCTION Time of Flight (TOF)(More)
We report on a 0.18&#x03BC;m CMOS range image sensor with 120&#x00D7;160 array of 10&#x00D7;10&#x03BC;m<sup>2</sup> photonic demodulation pixels allowing for real-time 3D imaging with a worst-case accuracy of 3.3% in the distance interval [1.2&#x2013;3.7] m.
This paper reports on characterization results of a single-photon avalanche diode (SPAD) array in standard CMOS 150nm technology. The array is composed by 25 (5 × 5) SPADs, based on p+/n-well active junction along with a retrograde deep n-well guard ring. The square-shaped SPAD has a 10µm active diameter and 15.6µm pitch size, achieving a 39.9% array fill(More)