Gi-Young Yang

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A unified compact model to predict the performance degradation of a circuit due to the electrical gate oxide stress is developed and verified by experimental results. Hot carrier injection (HCI), off-state (OS), and Fowler-Nordheim (FN) degradations can be described by a single formula which models the trap generation over the stress time and voltage. With(More)
A predictive MOSFET model is very critical for early circuit design in nanoscale CMOS technologies. In this work, we developed a new compact MOSFET model which can dramatically improve the predictability of BSIM4 for the major 3 process and 2 layout variations by applying the simple physics-based equations to model these parameters. The accuracy of the(More)
In this paper, we have developed a new floating-gate-type Flash cell compact model based on the channel potential by using PSP metal-oxide-semiconductor description. Cell-to-cell coupling, Fowler-Nordheim tunneling, and new leakage current formulas have been implemented on Verilog-A compact model. The channel potential calculation of the PSP model enables(More)
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