Ghasem Pasandi

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—In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Read SNM (RSNM) and Ion/I of f of read path by 219% and 113%, respectively at supply voltage of 300mV over conventional 6T SRAM cell in a 90nm CMOS technology. Proposed design lets(More)
Scaling in Silicon technology, usage of SRAM Cells has been increased to large extent while designing the embedded Cache and system on-chips in CMOS technology. Power consumption, packing density and the speed are the major factors of concern for designing a chip. The consumption of power and speed of SRAMs are some important issues among a number of(More)
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