Germán Escalante

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An Atmospheric Pressure Chemical Vapor Deposition (APCVD) system was implemented for SiO2 nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O3) were used and they were mixed into the APCVD system. The deposition temperatures were very low, from 125 to 250 C and the deposition time ranged from 1 to 15 minutes. The(More)
The modification of the glass composition by high repetition rate femtosecond (fs) laser pulse irradiation appears as a very attractive method for the production of photonic devices [1]. It has recently been shown that this mechanism enables producing refractive index changes, &#x0394;n&#x003E;10<sup>&#x2212;2</sup>, leading to the production of highly(More)
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