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—We demonstrate an integrated buck dc–dc converter for multi-CC microprocessors. At nominal conditions, the converter produces a 0.9-V output from a 1.2-V input. The circuit was implemented in a 90-nm CMOS technology. By operating at high switching frequency of 100 to 317 MHz with four-phase topology and fast hysteretic control, we reduced inductor and(More)
Fluctuations in intrinsic linear V<inf>t</inf>, free of impact of parasitics, are measured for large arrays of NMOS and PMOS devices on a testchip in a 150nm logic technology. Local intrinsic &#963;V<inf>T</inf>, free of extrinsic process, length and width variations, is random, and worsens with reverse body bias. Although the traditional area-dependent(More)
Rapidly increasing input current of microprocessors resulted in rising cost and motherboard real estate occupied by decoupling capacitors and power routing. We show by analysis that an on-die switching DC-DC converter is feasible for future microprocessor power delivery. The DC-DC converter can be fabricated in an existing CMOS process (90nm-180nm) with a(More)
On-chip inductors with 2 levels of magnetic material were integrated into an advanced 130-nm CMOS process to obtain over an order of magnitude increase in inductance (19) and Q-factor (16), significantly greater than prior values of 2 3 for high frequency inductors. The magnetic material enhances inductance at frequencies up to 9.8 GHz. Measurements and(More)