Gerhard Hobler

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Until now, Monte Carlo simulation of ion implantation into 3D-structures has been prohibited by the huge amount of CPU-time required. In this paper a method is presented which makes 3D-simulations with simple geometries feasible as well as 2D-simulations with arbitrary geometries. The method is applied to the sidewall doping of trenches.
structures in situ, and provide site-specific extractions for further ex situ processing or as sample preparation for other analyses. 1–3 Ion beam processing predates FIB, ranging from processing films for semiconductor devices to the preparation of transmission electron microscopy (TEM) samples, 4 and the ion/surface interaction has been understood and(More)
A new model of {311} defect evolution is proposed. The defects are characterized by their mean size and their concentration. The flux between free interstitials and {311} defects is described by an expression obtained by extending the classical theory of nucleation. The model is shown to agree well with the experimental data on {311} defect evolution of(More)
To increase the amount of devices on a constant wafer area a change from the common two-dimensional (2D) structures to a three-dimensional (3D) layout is suggested for modern semiconductor devices. Therefore modern process simulators must be capable of modeling these 3D structures. A simulation tool using the Monte Carlo method for ion implantation with the(More)
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