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Journals and Conferences
Charge collection is used as a non-destructive technique to analyze the statistical response of vertical power MOSFETs and their single-event burnout (SEB) rate as a function of the incident ion… (More)
This paper reports on the impact of single event gate rupture and post-irradiation gate stress on Power MOSFETs switching ability. A dedicated setup has been developed and presented in this paper.… (More)
New operational amplifiers have been ELDRS and heavy ions characterized. This paper presents the TID results at high and low dose rate and SEE tests results.
New radiation-hardened operational amplifiers have been ELDRS and SEE characterized. This paper presents the TID results at high and low dose rates up to 300krad(Si) and the SEE test results.
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate… (More)
We present Single Event Effects characterization and Total Ionizing Dose behaviour up to 300 krad(Si) on Rad-Hardened A/D converter.
We present results on the effects of ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of commercial, radiation hardened, and ELDRS-free devices. We observed low dose rate enhancement… (More)
Heavy ion-induced Power MOSFET's reliability degradation has been studied. Irradiations were realized at low and high energy with the same electronic stopping power at the surface of the die. For… (More)
Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are… (More)
This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between… (More)