George I. Haddad

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Many semiconductor quantum devices utilize a novel tunneling transport mechanism that allows picosecond device switching speeds. The negative differential resistance characteristic of these devices, achieved due to resonant tunneling, is also ideally suited for the design of highly compact, self-latching logic circuits. As a result, quantum device(More)
The resonant tunneling diode (RTD) has been widely studied because of its importance in the field of nanoelectronic science and technology and its potential applications in very high speed/functionality devices and circuits. Even though much progress has been made in this regard, additional work is needed to realize the full potential of RTD’s. As research(More)
Foreword To live, learn, and work successfully in an increasingly complex, information-rich and knowledge-based society, students and teachers must utilize technology effectively. Within a sound educational setting, technology can enable students to become: • Capable information technology users • Information seekers, analyzers, and evaluators • Problem(More)
Quantum electronic devices such as resonant tunneling diodes and transistors are now beginning to be used in ultrafast and compact circuit designs. These devices exhibit negative differential resistance (NDR) and/or negative transconductance in their I-V characteristics and have active dimensions of a few nanometers. Since the conventional drift-diffusion(More)
The international development and deployment of an electronic modularized dental curriculum is central to the development of an electronic engine to be used for the effective management of dental education. This will ensure continuity in high quality of care across all boundaries, through the continuous updating of its content and linkages to contemporary(More)
Devices from three major groups of two-terminal devices, i.e., transit-time diodes, transferred-electron devices, and quantum-well devices, have been employed successfully to generate RF power at frequencies above 200 GHz. At frequencies up to 300 GHz, Si IMPATT diodes yielded the highest RF power levels from any fundamental solid-state source, e.g., 50 mW(More)
Modern wind turbines are relatively “immature” in the sense that they have not been fielded for a sufficient amount of time to assess their long-term viability. Availability, the ability of a system to function when it is required, is a major concern for alternative energy systems. Profits and environmental benefits will be lost if the costs and energy(More)
Interactions of carriers with interface optical phonons dominate over other carrier–phonon scatterings in narrow quantum-well structures. Herein, a transfer matrix method is used to establish a formalism for determining the dispersion relations, electrostatic potentials, and Fröhlich interaction Hamiltonians of the interface optical phonons for(More)
A dispersion relation for an electron in a two-layer ~and also multilayer! quantum well ~QW! is formed as a result of a certain combination of initial dispersion relations for each of the forming layers. Such a combination can be used to engineer new dispersion relations with desirable properties. The same relates to a two-dimensional electron gas ~2DEG!(More)