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Tellurium has several remarkable properties that make it an attractive n-type dopant in III–V semiconductors, namely high incorporation and activation efficiency resulting in high achievable doping… Continue Reading
In a compressor the existence of the clearance volume is inevitable, even rolling piston compressor is a kind of compact structure compressor, overflow is a method to decrease the effect of clearance… Continue Reading
We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a… Continue Reading
III-V semiconductors have emerged as the leading candidate to replace Si as the n-FET channel material for future low power logic applications. However, to realize the full performance benefits of… Continue Reading