Gennady Mil'nikov

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We have theoretically investigated the effects of random discrete distribution of implanted and annealed arsenic (As) atoms on device characteristics of silicon nanowire (Si NW) transistors. Kinetic Monte Carlo simulation is used for generating realistic random distribution of active As atoms in Si NWs. The active As distributions obtained through the(More)
The paper presents a method for quantum transport simulations in nanowire (NW) MOSFETs with inelastic scattering processes incorporated. An atomistic tight-binding Hamiltonian with realistic electron-phonon interaction is transformed into an equivalent low-dimensional transport model which can be easily used in full-scaled NEGF simulations. The utility of(More)
Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's(More)
The paper presents a method for atomistic quantum transport simulations in nanowire (NW) MOSFETs. The original tight-binding (TBM) Hamiltonian of the nanostructure is replaced with an approximate model which reproduces the transport properties at atomistic level. Small size of the equivalent model (EM) makes the atomistic transport simulation(More)
We construct a low-dimensional representation of a tight-binding model to be used in the self-consistent device simulation. The method combines the original atomic orbitals of the nanowire device into a small basis set which reproduces the band structure and all the relevant electronic states. The basis representation greatly reduces the numerical burden(More)
Recently, we have proposed a new method for device simulations which allows for splitting the device area into a set of independent elements and computing all the physical observables in the form of local spectral representation. The shape of the device elements and their internal coordinate representation are arbitrary which offers a natural way to treat(More)
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