Geliang Yang

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This paper presents a wide tuning rang mm-wave VCO (voltage controlled oscillator) fabricated in IBM 90-nm CMOS technology. The VCO can be tuned from 31.4 GHz to 42.2 GHz and utilizes a differential tuning mechanism based on varactors and switched capacitors. A switched current source is used to improve the performance of the VCO when an MIM(More)
A novel low-loss image-reject mixer (IRM) using the source follower isolation method for digital radio mondiale/digital audio broadcasting applications is presented. It is based on double-quadrature mixers (DQMs) and passive polyphase filters (PPFs). The DQM is designed with four passive CMOS mixers. A source follower is inserted between the RF PPF and DQM(More)
In this paper, a Q-band common source low noise amplifier (LNA) using 90-nm standard RF-CMOS technology is proposed. The design methodologies for millimeter-wave (MMW) amplifiers are discussed. The post layout simulation results show that S<inf>11</inf> is lower than &#x2212;14 dB and S<inf>22</inf> is &#x2212;11 dB at the peak gain of 14.6 dB at 37.5 GHz(More)
We present a 31–45.5 GHz injection-locked frequency divider (ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to(More)
A Ka-band sub-harmonically pumped resistive mixer (SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance (balun) with magnitude and phase imbalance compensation is used in the mixer to transform local(More)
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