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ACKNOWLEDGMENT The authors would like to thank the National Chip Implementation Center (CIC) for technical support. ABSTRACT: A wideband slotted circularly polarized (CP) patch antenna is introduced for 5– 6-GHz WLAN applications. A small 14.6 ϫ 14.6 mm square patch on Duroid 5880 substrate can provide a return-loss bandwidth of 11% and an axial-ratio(More)
A small wideband microstrip patch antenna is introduced. The antenna is designed to function in the 5-6 GHz wireless LAN bands. It achieves multi-band functionality through the addition of two slots to a square patch (21 mm by 21 mm by 2.5 mm). The proposed antenna also generates circular polarization and has a 3 dB axial ratio bandwidth of 2.8%. The(More)
As there are millions of cancer deaths every year, it is of great value to identify applicable prognostic biomarkers. As an important alarm, the prognostic role of high mobility group box 1 (HMGB1) in cancer remains controversial. We aim to assess the association of HMGB1 expression with prognosis in cancer patients. Systematic literature searches of(More)
We present a 31–45.5 GHz injection-locked frequency divider (ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to(More)
A Ka-band sub-harmonically pumped resistive mixer (SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance (balun) with magnitude and phase imbalance compensation is used in the mixer to transform local(More)
—A reconfigurable stacked patch antenna is introduced for wireless power reception and data telemetry application in sensors. The proposed antenna operates at 5.8 GHz with 9.4 dBi gain and 7.6% bandwidth. At a lower frequency 2.45 GHz the antenna operates as a planar inverted-F antenna (PIFA) with 3.3 dBi gain and 2.0% bandwidth. Switching between the two(More)
In this paper, a Q-band common source low noise amplifier (LNA) using 90-nm standard RF-CMOS technology is proposed. The design methodologies for millimeter-wave (MMW) amplifiers are discussed. The post layout simulation results show that S<inf>11</inf> is lower than &#x2212;14 dB and S<inf>22</inf> is &#x2212;11 dB at the peak gain of 14.6 dB at 37.5 GHz(More)
This paper presents a wide tuning rang mm-wave VCO (voltage controlled oscillator) fabricated in IBM 90-nm CMOS technology. The VCO can be tuned from 31.4 GHz to 42.2 GHz and utilizes a differential tuning mechanism based on varactors and switched capacitors. A switched current source is used to improve the performance of the VCO when an MIM(More)
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