Gan Jun-ning

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A design methodology of Darlington low noise figure (LNA) for application at ultra wide bandwidth using a resistive feedback scheme is proposed. The packaged SiGe heterojunction bipolar transistors (HBTs) BFP740 and chip type passive components were used for this direct-coupled LNA. The Darlington amplifier has high gain of 20 dB with variation of 0.5 dB(More)
A feedback topology low-noise amplifier (LNA) using advanced SiGe HBT technology for application in ultra-wideband (UWB) systems is presented in this paper. The design consists of single stage topology in two feedback loops to achieve broadband gain together with low noise figure (NF) and good input and output impedance match. Using 0.35 mum SiGe HBT(More)
With a three-dimensional thermal-electrical model, a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability. Compared with the traditional uniform emitter length design, the peak temperature of multi-finger SiGe HBT with non-uniform length is lowered. Therefore, it can(More)
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