Gagan Khanduri

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This work studies the effects of base retarding field, sheet resistance and minority carrier velocity saturation on base transit time for optimal base profile in bipolar devices. An iterative technique is employed to provide a global minimum for the product of transit time and sheet resistance in base. The global minimum in base transit time is achieved for(More)
Study and analysis of a proposed high-voltage high current switching n-p-n silicon germanium single-heterojunction bipolar transistor (SHBT) is performed using 2D MEDICI device simulator. A theoretical formulation is provided to substantiate the simulation results obtained regarding quasi-saturation phenomenon in bipolar transistors. Comparison with the(More)
The present work gives an approach to optimize the base doping and Ge-dose in SiGe HBTs using the fixed point iterative methodology and includes the effect of minority carrier velocity saturation on total base transit time for SiGe HBTs. It is shown that shifted-Ge profile approach and triangular Ge-profile in base can lead to simultaneous optimization of(More)
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