Gabriel Romero-Paredes

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FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions Revista Mexicana de Física, A study is presented on the evolution of the FTIR features and the changes in the photoluminescence (PL) spectra of chemically oxidized porous silicon layers (PSLs) successively aged under controlled conditions. The PSLs were(More)
Polymerized organic thin films were synthesized on a variety of substrates by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique using isopropanol as precursor. Hydrogen peroxide, ammonium hydroxide, and iodine dissolved in isopropanol were used as precursor's dopants and chlorobenzene as copolymerization precursor. The structural, optical and(More)
Films of iridium oxide were deposited by the dipping method from a 0.005M Iridium chloride solution in iso-propanol and post-annealed at different temperatures (350, 450 and 550 °C). After three dippings, very thin films, with effective thickness less than 10 nm were obtained. Their effective refractive index at 632.8 nm wavelength changed from 2.495(More)
High quality ZnO films were obtained by thermal oxidation of Zn films on the temperature range from 300 to 700 °C. Zn films of 190 nm in thickness were deposited on silicon and glass substrates by the sputtering technique. Thermal oxidation was done at normal environment conditions. The complete oxidation of the Zn films was determined by the ZnO(More)
Electrical characterization of nanometric PdO films produced by thermal oxidation of Pd films in air at atmospheric pressure is reported. The PdO films were characterized using the van der Pauw-Hall method to establish the effects of oxidation degree of Pd thin films. The measured carrier mobility is directly related to the oxidation rate and film(More)
A method to manage the resistivity of n-type ZnO films is presented. It involves the controlled diffusion of Zn at low temperature in N2 atmosphere into the ZnO/Zn/ZnO structure. The structures were made by DC sputtering technique. The diffusion periods were varied from 5 to 30 min. This process allow us to obtain ZnO films with excess of Zn (ZnO:Zn). The(More)
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