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Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties.
Electrical measurements show that the N-doped graphene exhibits an n-type behavior, indicating substitutional doping can effectively modulate the electrical properties of graphene.
Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.
The metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO(2)) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process and is compatible with current silicon processing techniques is reported.
A stable solution-processed polymer semiconductor with record high-mobility for printed transistors
This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems.
Uniform hexagonal graphene flakes and films grown on liquid copper surface
A chemical vapor deposition approach is reported that allows the direct synthesis of uniform single-layered, large-size, spatially self-aligned, and single-crystalline hexagonal graphene flakes (HGFs) and their continuous films on liquid Cu surfaces, demonstrating good conductivity and capability for carrying high current density.
Low temperature growth of highly nitrogen-doped single crystal graphene arrays by chemical vapor deposition.
A self-assembly approach is demonstrated that allows the synthesis of single-layer, single crystal and highly nitrogen-doped graphene domain arrays by self-organization of pyridine molecules on Cu surface at temperature as low as 300 °C.
Graphene-coated silica as a highly efficient sorbent for residual organophosphorus pesticides in water
A new form of graphene-coated silica (GCS) has been prepared by mixing exfoliated graphene oxide with acid-treated silica and reducing it with hydrazine hydrate so that it coats the silica particles.
Self-organized graphene crystal patterns
The phenomenon of ordered pattern formation is universal in nature but involves complex non-equilibrium processes that are highly important for both fundamental research and applied materials
Two‐Stage Metal‐Catalyst‐Free Growth of High‐Quality Polycrystalline Graphene Films on Silicon Nitride Substrates
By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The
Active Morphology Control for Concomitant Long Distance Spin Transport and Photoresponse in a Single Organic Device
Long distance spin transport and photoresponse are demonstrated in a single F16 CuPc spin valve. By introducing a low-temperature strategy for controlling the morphology of the organic layer during
Efficient blue emission from siloles
2,3,4,5-Tetraphenylsiloles with different 1,1-substituents on the ring silicon atoms, i.e., 1,1-dimethyl-2,3,4,5-tetraphenylsilole (1), 1-methyl-1-(3-chloropropyl)-2,3,4,5-tetraphenylsilole (2),