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In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all… (More)
Correlation of IP3 in a pHEMT to the third derivative of Ids wrt Vgs, or Gm3 is addressed. A non-linear large-signal pHEMT model was developed based on the fitting RF Gm characteristics as well as… (More)
In this paper, we characterize and model M:N baluns for RFIC design. A modeling methodology is presented, based on a scalable lumped-element approach that incorporates both skin effect and substrate… (More)
The importance of developing GOST standard specifications for the quality control of different grades of synthetic rubber produced in Russia, incorporating standard elastic strength and rheometric ...
Analytical analysis on linearity of multi-throw switches is given that serves as design guide. A switch multi-gate switch model is developed that includes all important mechanism associated with… (More)
Dynamic charging effects have large impact on power, PAE of power amplifiers. When simulating a Power amplifier with InGaP-GaAs HBTs, modeling often fails to predict well a higher PAE at high power… (More)