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Magnetic effects at the interface between non-magnetic oxides.
The electronic reconstruction at the interface between two insulating oxides can give rise to a highly conductive interface. Here we show how, in analogy to this remarkable interface-inducedExpand
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Quasi-ideal strontium titanate crystal surfaces through formation of strontium hydroxide
In recent years, well-defined and nearly perfect single crystal surfaces of oxide perovskites have become increasingly important. A single terminated surface is a prerequisite for reproducible thinExpand
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Electronically coupled complementary interfaces between perovskite band insulators.
Perovskite oxides exhibit a plethora of exceptional properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkableExpand
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Flexoelectric rotation of polarization in ferroelectric thin films.
Strain engineering enables modification of the properties of thin films using the stress from the substrates on which they are grown. Strain may be relaxed, however, and this can also modify theExpand
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Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films
Detailed analysis of transport, magnetism, and x-ray absorption spectroscopy measurements on ultrathin La0.7Sr0.3MnO3 films with thicknesses from 3 to 70 unit cells resulted in the identification ofExpand
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Misfit strain accommodation in epitaxial ABO3 perovskites: Lattice rotations and lattice modulations
We present a study of the lattice response to the compressive and tensile biaxial stress in La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO) thinfilms grown on a variety of single-crystal substrates:Expand
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Orbital reconstruction and the two-dimensional electron gas at the LaAlO3/SrTiO3 interface.
In 2004, Ohtomo and Hwang discovered that an electron gas is created at the interface between insulating LaAlO3 and SrTiO3 compounds. Here we show that the generation of a conducting electron gas isExpand
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Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth
During the initial growth of the ferromagnetic oxide SrRuO3 on TiO2-terminated SrTiO3, we observe a self-organized conversion of the terminating atomic layer from RuO2 to SrO. This conversion inducesExpand
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A flexoelectric microelectromechanical system on silicon.
Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment and, conversely, to bend in response to an electric field. Compared with piezoelectricity,Expand
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Parallel electron-hole bilayer conductivity from electronic interface reconstruction.
The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transportExpand
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