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Stacking fault related 3.31-eV luminescence at 130-meV acceptors in zinc oxide
Bulk ZnO samples, epitaxially grown ZnO layers, and ZnO nanostructures frequently exhibit a characteristic emission band at $3.31\text{\ensuremath{-}}\mathrm{eV}$ photon energy whose origin isExpand
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Graphene as catalyst support: The influences of carbon additives and catalyst preparation methods on the performance of PEM fuel cells
Abstract The reduction of the platinum amount for efficient PEM (polymer electrolyte membrane) fuel cells was achieved by the use of graphene/carbon composites as catalyst support. The influences ofExpand
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Role of the ligand layer for photoluminescence spectral diffusion of CdSe/ZnS nanoparticles
The time-resolved photoluminescence (PL) characteristics of single CdSe/ZnS nanoparticles, embedded in a PMMA layer is studied at room temperature. We observe a strong spectral jitter of up to 55Expand
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Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system
ZnO nanorods were implanted with Ga+ ions in a combined scanning-electron-microscope/focused-ion-beam system with doses from 1011to1017cm−2. Electrical resistance measurements performed on single ZnOExpand
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Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods
The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanorods were analyzed under ambient conditions and in the chamber of a scanning electron microscope underExpand
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The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures
TLDR
We report on low-temperature cathodoluminescence measurements with very high spatial resolution and high-resolution transmission electron microscope investigations carried out on the same pieces of hetero-epitaxial ZnO samples with unusual layer orientation. Expand
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Structural and spectroscopic properties of AlN layers grown by MOVPE
Abstract The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c -plane sapphire substrates due to the changes in growth parameters, such as V–III ratio,Expand
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Silicon‐doping induced strain of AlN layers: a comparative luminescence and Raman study
Si-doped aluminum nitride layers show a shift of the near-band-edge luminescence at around 6 eV to lower energies for increasing Si concentration up to ≈(1–3) × 1019 cm–3. For higher concentrations,Expand
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MOVPE growth of high quality AlN layers and effects of Si doping
High quality AlN layers were grown by MOVPE on c -plane sapphire substrates after optimization of various stages of the epitaxial process. AFM measurements revealed a rms surface roughness of 0.2 nm.Expand
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Influences of biaxial strains on the vibrational and exciton energies in ZnO
We have investigated the structural, optical, and vibrational properties of strained heteroepitaxial ZnO layers by high resolution x-ray diffraction, reflectivity, and Raman measurements. The ZnOExpand
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