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Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires
This letter demonstrates a vertical silicon-nanowire (SiNW)-based tunneling field-effect transistor (TFET) using CMOS-compatible technology. With a Si p<sup>+</sup>-i- n<sup>+</sup> tunneling…
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A compact and low loss Y-junction for submicron silicon waveguide.
TLDR
A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguide is designed using finite difference time-domain (FDTD) simulation and particle swarm optimization (PSO) and fabricated in a CMOS compatible process.
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Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFET
This letter presents a vertical gate-all-around silicon nanowire transistor on bulk silicon wafer utilizing fully CMOS compatible technology. High aspect ratio (up to 50: 1) vertical nanowires with…
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High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and…
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Ultralow drive voltage silicon traveling-wave modulator.
TLDR
A CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction is demonstrated, demonstrating operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art.
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Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance
Fully CMOS compatible silicon-nanowire (SiNW) gate-all-around (GAA) n- and p-MOS transistors are fabricated with nanowire channel in different crystal orientations and characterized at various…
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Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization
Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (<i>V</i> <sub>¿</sub>…
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Regenerative oscillation and four-wave mixing in graphene optoelectronics
We demonstrate the exceptionally-high third-order nonlinearity of integrated mono-layer graphene-silicon hybrid optoelectronics, enabling ultralow power resonant optical bistability, self-induced…
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Physical mechanisms of endurance degradation in TMO-RRAM
  • B. Chen, Y. Lu, D. Kwong
  • Engineering
    International Electron Devices Meeting
  • 1 December 2011
We report, for the first time, three types of endurance failure behaviors in TMO based RRAM. New physical mechanisms are proposed to clarify the physical origins of these endurance failures. A…
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Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices
We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near…
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