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Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center
- G. D. Watkins, J. Corbett
- Materials Science
- 1 June 1964
The Si-$E$ center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level at…
Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO
- L. Vlasenko, G. D. Watkins
- Materials Science
- 21 March 2005
The dominant defect observed in the photoluminescence (PL) of room-temperature electron-irradiated ZnO by optical detection of electron paramagnetic resonance (ODEPR) is determined to be the…
Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K
- L. Vlasenko, G. D. Watkins
- Materials Science
- 6 July 2005
Intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K are studied by optical detection of electron paramagnetic resonance (ODEPR). Observed in the photoluminescence (PL)…
Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon
- E. Gürer, B. Benson, G. D. Watkins
- Materials Science
- 1 January 1992
Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon
- G. D. Watkins, F. Ham
- Physics
- 15 May 1970
DEFECTS IN IRRADIATED SILICON: ELECTRON PARAMAGNETIC RESONANCE OF THE DIVACANCY
- G. D. Watkins, J. Corbett
- Materials Science
- 19 April 1965
PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON
- J. Corbett, G. D. Watkins
- Materials Science
- 19 April 1965
DEFECTS IN IRRADIATED SILICON. II. INFRARED ABSORPTION OF THE Si-A CENTER
- J. Corbett, G. D. Watkins, R. M. Chrenko, R. Mcdonald
- Physics
- 15 February 1961
S>The silicon--A center is a major radiation-damage defect produced in "pulled" silicon by room-temperature irradiation. The infrared measurements are presented which, in conjunction with spin…
Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron
- G. D. Watkins
- Materials Science, Physics
- 15 December 1975
An EPR spectrum, labeled Si-$G28$, is identified as arising from neutral interstitial boron in silicon. It is produced by 1.5-MeV electron irradiation at 20.4\ifmmode^\circ\else\textdegree\fi{}K,…
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