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Intrinsic defects in silicon
Abstract A review is given of what has been learned from electron paramagnetic resonance (EPR) and localized vibrational mode (LVM) spectroscopy concerning isolated lattice vacancies andExpand
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center
The Si-$E$ center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level atExpand
Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO
The dominant defect observed in the photoluminescence (PL) of room-temperature electron-irradiated ZnO by optical detection of electron paramagnetic resonance (ODEPR) is determined to be theExpand
Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K
Intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K are studied by optical detection of electron paramagnetic resonance (ODEPR). Observed in the photoluminescence (PL)Expand
EPR of Cr 2+ in II-VI lattices
The EPR spectra of ${\mathrm{Cr}}^{2+}$ in cubic ZnS, ZnSe, ZnTe, and CdTe, and in hexagonal ZnS and CdS are reported. For each, $\ensuremath{\Delta}M=\ifmmode\pm\else\textpm\fi{}4,Expand
DEFECTS IN IRRADIATED SILICON. II. INFRARED ABSORPTION OF THE Si-A CENTER
S>The silicon--A center is a major radiation-damage defect produced in "pulled" silicon by room-temperature irradiation. The infrared measurements are presented which, in conjunction with spinExpand
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