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Metal oxide resistive memory switching mechanism based on conductive filament properties
By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament (CF) features controlling TiN/HfO2/TiN resistive memory (RRAM)Expand
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Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO2/TiN resistive memory operations. TheExpand
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Applications of DCIV method to NBTI characterization
Abstract The DCIV method was applied to investigate negative bias temperature instability (NBTI) in SiO 2 gate oxides. The DCIV technique, which measures the interface defect density independentlyExpand
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A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks
In this paper, we investigate the characteristics of the defects responsible for the leakage current in the SiO2 and SiO2/HfO2 gate dielectric stacks in a wide temperature range (6 K-400 K). WeExpand
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Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs
Radiation induced charge trapping in ultrathin HfO2 -based n-channel MOSFETs is characterized as a function of dielectric thickness and irradiation bias following exposure to 10 keV X-rays and/orExpand
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Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
The optical excitation and thermal ionization energies of oxygen vacancies in m-HfO2 are calculated using a non-local density functional theory with atomic basis sets and periodic supercell. TheExpand
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Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks
Electron trapping in high- gate dielectrics under constant voltage stress is investigated. It is suggested that the electron trapping occurs through a two-step process: resonant tunneling of theExpand
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The effect of interfacial layer properties on the performance of Hf-based gate stack devices
The influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increaseExpand
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Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statisticalExpand
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Charge Transport and Degradation in HfO2 and HfOx Dielectrics
We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport simulations based onExpand
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