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We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition(More)
In this paper, we present results from monolithic passively mode-locked GaAs/AlGaAs quantum well lasers operating at 830 nm. Colliding pulse mode locking is achieved at repetition rates of 126 GHz with pulsewidths as short as 0.43 ps, an unprecedented value in monolithic semiconductor lasers operating at such high pulse repetition rates. We use a double(More)
We present results from GaAs/AlGaAs quantum-well colliding-pulse mode-locked lasers emitting pulses at 830 nm with a repetition rate of 20 GHz. In particular we investigate the effects of nonabsorbing mirrors on the output power characteristics of these devices in mode-locking operation. Under best mode-locking conditions, the lasers with nonabsorbing(More)
We present a monolithic passively mode-locked 795nm GaAs/AlGaAs quantum well laser with enlarged vertical mode profile and a low duty-cycle cavity design, emitting 710fs long pulses at a peak power of 9.8W per facet. Semiconductor laser, mode-locked laser, coherent population trapping.
This work presents an overview of a combined experimental and theoretical analysis on passive mode-locking in semiconductor quantum-well lasers based on reverse biased saturable absorbers. The experimental results describe the dynamics of laser diodes based on Aluminum quaternary materials at 1550 nm and we will also mention recent results related to GaAs(More)
Recent growing interest in miniature atomic frequency references and precision magnetometers has motivated investigations of coherent population trapping (CPT) and its use in such applications [1]. System designs based on picosecond mode-locked lasers have been previously reported for generating the CPT effect, using Ti:Sapphire lasers passively mode-locked(More)
We report the development of room-temperature distributed-feedback quantum-cascade lasers operating in a single mode in the 3.34 to 3.35 μm wavelength range. First-order lateral gratings with high aspect ratio (the ratio between the grating etch depth and its period) were formed using inductively coupled plasma etching. The as-cleaved lasers emit in(More)
Microwave-modulated light can be down-converted to generate high frequency electrical signals and passively mode-locked semiconductor lasers are promising candidates as sources of short pulses at high repetition rates [1,2]. For this purpose we combine the use of high power laser epistructures [3] with harmonic mode-locking configurations (HML) [1,2]. In(More)