G. Saint-Girons

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1 Centro de Investigación en Química Biológica y Materiales Moleculares, Universidad de Santiago de Compostela, Santiago de Compostela, Spain, 2 Institut des Nanotechnologies de Lyon, Centre National de la Recherche Scientifique École Centrale de Lyon, Lyon, France, 3 Consejo Superior de Investigaciones Científicas, Institut de Ciéncia de Materials de(More)
We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the(More)
In this work we will present the objectives and last results of the FP7-ICT-2013-11-619456 SITOGA project. The SITOGA project will address the integration of transition metal dioxides (TMO) materials in silicon photonics and CMOS electronics. TMOs have unique electro-optical properties that will offer unprecedented and novel capabilities to the silicon(More)
In this communication, we present strategies to implement novel or enhanced optoelectronic functionalities on silicon via the monolithic integration of functional oxides as active layers for nanophotonic devices. We focus on the use of ferroelectric oxides with naturally strong electro-optical coefficients such as BaTiO<sub>3</sub> (BTO) on SOI for the(More)
In this work, the potentiality of molecular beam epitaxy techniques to prepare epitaxial lanthanum aluminate (LaAlO3) films on Si(001) is explored. We first demonstrate that the direct growth of LaAlO3 on Si(001) is impossible : amorphous layers are obtained at temperatures below 600 C whereas crystalline layers can be grown at higher temperatures but(More)
We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active(More)
High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 Ω(More)
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain Dep. de Fisica, Universitat Autònoma de Barcelona, Campus UAB, Bellaterra 08193, Barcelona, Spain Institut des Nanotechnologies de Lyon (INL), UMR CNRS 5270, Ecole Centrale de Lyon, 36 avenue Guy de Collongues, 69134 Ecully Cedex, France Materials(More)
Materials that can couple electrical and mechanical properties constitute a key element of smart actuators, energy harvesters, or many sensing devices. Within this class, functional oxides display specific mesoscale responses which often result in great sensitivity to small external stimuli. Here, a novel combination of molecular beam epitaxy and a(More)
Continuous-wave operation, to as high as 7 degrees C, of 1.5-microm optically pumped vertical-external-cavity surface-emitting lasers is reported. The epitaxial structure, monolithically grown on InP by metal-organic chemical vapor deposition, consists of an InAlAs/GaInAlAs Bragg reflector, an InGaAs/InGaAsP active region, and an InP capping layer. The(More)