G. S. Lujan

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The electron mobility in high-k transistors is degraded when compared to silicon oxide transistors. So far this problem has hampered the production of high-k transistors. One of the main causes of the low mobility is remote Coulomb scattering from charges in the dielectric. In this paper we analyse how the dielectric constants can change the mobility in a(More)
Silicon oxynitride (SiOxNy) insulators have been obtained by low-energy molecular nitrogen ion (N ‡ 2 ) implantation in Si substrates prior to thermal or high density O2 ECR (electron cyclotron resonance) or N2O RP (remote plasma) plasma oxidation at temperatures of 20°C and 350°C, respectively. Characterization by Fourier transform infrared (FTIR) analyses(More)
Austenitic stainless steels represent a significant portion of the alloys used in the aeronautical, chemical, shipbuilding, food processing and biomechanical industries. They combine good mechanical properties with high corrosion resistance. When subjected to cold deformation, these steels exhibit a metastable phase called: strain induced martensite(More)
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