G. Rajeswaran

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Cr-MIS solar cells were fabricated on 18-30 &#181;m epitaxial-Si layers grown on poly-Si substrates. Solar conversion efficiency values ranged from an average of 8.8% to 4.0% depending on choice of substrate. Nonuniformity of certain substrates led to low efficiency values. Interface state density &gt; 5 &#215; 10<sup>12</sup>/cm<sup>2</sup>-eV contributed(More)
A new process has been introduced to improve both efficiency and reproducibility of Cr-MIS solar cells. Active area efficiencies of up to 13.2% have been measured for 2 cm<sup>2</sup>cells. These improvements are due to increased silicon surface cleanliness, an optimized interfacial oxide thickness, and a one pump-down vacuum process. Spectral response data(More)
A comprehensive analysis of shelf life degradation in metal-insulator-semiconductor (MIS) solar cells has been performed. The instabilities associated with Cr-MIS solar cells result from a decrease in the insulator thickness. On modeling Sehottky-barrier formation against oxide thickness variations, one finds that there is a range of oxide thicknesses which(More)
The 50 Å Cu/30 Å Cr/20 Å SiO,/Si solar cell structure has been analyzed by Auger, ESCA and ellipsometer measurements. An oxidation-reduction failure mechanism has been proposed for shelf-life degradation, and experimental evidence for such behavior is presented. The effect of this degradation is a decrease in the oxide thickness at the interface bringing(More)
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