G. Oleszek

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This work is believed to be the first report of localized elevated oxygen concentration (or pileup), which occurs with thermal anneals of strained, boron doped SiGeC layers. The thermally activated oxygen updiffusion is directly correlated to concentrations of germanium, carbon, and boron. A strong dependency on prebake temperature was also found. SIMS(More)
This paper presents the results of studies on oxygen concentration levels in in-situ boron doped sub-50 nm SiGe and SiGeC base strained layer NPN HBTs. The layers were characterized using four-point probe, secondary ion mass spectrometry and X-ray diffraction. The effect of oxygen concentration levels on boron sheet resistance, minority carrier lifetime,(More)
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