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In<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub> thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and(More)
Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. We report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of(More)
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