G.N. Parsons

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Amorphous silicon thin-film transistors (TFTs), in a top-gate staggered electrode structure have been prepared using selectively deposited doped silicon contact layers, formed in-situ by plasma-enhanced chemical vapor deposition (PECVD). Selective deposition reduces the number of processing steps and assures the formation of low-resistance contacts. Devices(More)
This article demonstrates full self-aligned inverted-staggered amorphous silicon thin-film transistors (TFT's) fabricated using selective plasma deposition of doped microcrystalline silicon source/drain contacts. Back-side exposure, using the bottom metal gate as the mask, produced the self-aligned contact openings. Selective deposition of the n+ silicon(More)
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