G L Christenson

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A design for a highly tunable long-wavelength LED/photodetector has been investigated. The device consists of a GaAs-based distributed Bragg reflector (DBR) that is wafer-bonded to InP-based active layers, with a surface-micromachined tunable top DBR mirror to produce the wavelength shift. A 1.5-/spl mu/m device has been fabricated with a continuous tuning(More)
We have combined the technologies of wafer bonding and micromachining to produce a tunable LED at 1.51 /spl mu/m. The bonding technique allows us to combine an InP-based multiple quantum well structure with a GaAs-based Bragg mirror for higher reflectivity than traditional InP-based mirrors. Micromachining techniques then allow us to suspend a mirror above(More)
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