G. Kamarinos

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2014 Metal-Insulator-InSb structures, for infrared imaging devices operating in the charge injection mode, have been developed. The sensitivity of devices is conditioned by the generationrecombination processes occurring in the semiconductor. Several methods have been used to study these generation-recombination processes. C(t) experiments in depletion and(More)
The effects of hot carriers on the characteristics of intrinsic offset gated n-channel polysilicon thin-film transistors (TFTs), with channel length L = 10 lm, have been studied in relation to the offset length DL. From the evolution of the transfer and output characteristics during stress, the degree of the device degradation is deduced. In devices with DL(More)
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