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In this paper, we present the temperature dependent microwave noise measurements and modeling of AlGaN/GaN HEMTs on Si substrate over a wide temperature range from &#x2212;50 to 200 &#x00B0;C. The typical noise parameters including minimum noise figure (NF<inf>min</inf>), noise equivalent resistance (R<inf>n</inf>), optimum source reflection coefficient(More)
In this letter, we report positive bias-induced V<sub>th</sub> instability in single and multilayer graphene field effect transistors (GFETs) with back-gate SiO<sub>2</sub> dielectric. The &#x0394;V<sub>th</sub> of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, it does not show(More)
A comprehensive scalable trap-charge model for the dc and pulsed I-V modeling of GaN high electron-mobility transistor is presented. While interface traps are considered for dc I-V modeling, surface states and traps in the AlGaN barrier and GaN buffer are considered for the pulsed I-V model. A surface-potential-based model is presented for interface traps,(More)
In this paper, the 2-D electron gas density (n<sub>s</sub>) and Fermi level (E<sub>f</sub>) analytical expressions as an explicit function of the terminal biases that covers the strong- and moderate-inversion and subthreshold regions and scalable with physical parameters are developed. It is validated by the comparison with the (exact) numerical solutions(More)
We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at V<sub>D</sub> as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with g<sub>m</sub>=646 mS/mm, I<sub>on</sub>=1.03 A/mm, I<sub>OFF</sub>=1.13(More)
High-frequency microwave noise performances (2 GHz to 19 GHz) were investigated on AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) with 0.15 &#x03BC;m T-gate fabricated on high resistivity 4-inch Silicon. The HEMTs exhibited maximum drain current density (I<sub>Dmax</sub>) of 830 mA/mm, maximum extrinsic transconductance (g<sub>mmax</sub>) of 353(More)
In this work, enhanced noise and linearity performance in 0.25 &#x00B5;m gate-length AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on high-resistivity silicon substrate using atomic-layer-deposited (ALD) AI2O3 as gate dielectric is reported. High current gain cut-off frequency f<inf>T</inf> above 40 GHz and low(More)
Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches are highly linear, low loss, inherently broadband with low power consumption. Given its nearly ideal technical switching specifications, highly complex, agile switching circuits using RF MEMS will be possible. RF MEMS switches integrated with Monolithic Microwave Integrated Circuits (MMIC)(More)
Recently the development of CMOS-compatible fabrication technologies for GaN HEMTs has attracted increasing levels of interest [1]-[4]. A low temperature ohmic contact technology is required for gate-first device fabrication and CMOS-first GaN-Si integration process, however, typical ohmic contacts need annealing at &gt; 800&#x00B0;C [1], [2]. In the past,(More)
a Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 138602, Singapore b School of Material Science and Engineering, Nanyang Technological University, 639798, Singapore c Temasek Laboratories@NTU, Nanyang Technological University, 637553, Singapore d School of Electrical and Electronic Engineering, Nanyang Technological(More)