G. Guillot

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Letters population. The possibility of rare cases of HIV-1 and HIV-2 coinfections, recombinant HIV-1 and HIV-2 strains, and also peculiar HIV-2 variants from Central Africa, should be considered in Gabon. A possible entry of HIV-2 infection into Central Africa from Gabon in the near future could have major public health implications.
Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation current, kink effect and hysteresis effect. The related deep levels are directly characterized by conductance deep level transient spectroscopy (CDLTS) method.(More)
AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al 2 O 3 substrates reveals anomalies on I ds –V ds –T and I gs –V gs –T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current(More)
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