G. Guillot

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Hahn-echoes have been observed in stray-field gradients of 37.5 T/m and 74.5 T/m for deuterium in heavy water in a number of forms: liquid, ice, and coordinated in solid copper sulfate and silica gel. In the diamagnetic samples, the application of many pulses (> 1000 or more) in long pulse-trains produced many sustained echoes. This lengthening of T(echo)(More)
AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al2O3 substrates reveals anomalies on Ids–Vds–T and Igs–Vgs–T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An(More)
A proton magnetic resonance image of ice was observed with the stray-field (STRAFI) technique. A preliminary study of proton relaxation times was performed in water and ice, at different temperatures. For example, a value of 3.5 micros for the spin-spin relaxation time, T(2), was found in ice at 258 K. Such a short T(2) value leads to significant signal(More)
Silicon nanoparticles (Si NPs) with a diameter size ranging from 4 to 8 nm were successfully fabricated. They exhibit a visible photoluminescence (PL) due to the quantum confinement effect. Chemical functionalization of these Si NPs with alkyl groups allowed to homogeneously disperse them in nonpolar liquids (NPLs). In comparison to most of literature(More)
2014 The midgap donor level EL2 is a very important defect because of the role it plays in the compensation of undoped semi-insulating GaAs. The knowledge of the exact EL2 structure becomes of even greater prime importance. We present here a review of the experimental results concerning artificial EL2 creation by electron and neutron irradiation and also(More)
ZnSe-GaAs heterostructures are heterovalent semiconductor heterostructures which are almost lattice-matched, and appear in most recently demonstrated blue and blue-green lasers. The large valence band offset present in this heterojunction also hinders holes injection from the III-V substrate into the II-VI active layer. Using photocurrent (PC) measurements(More)
GaN layers were grown by MOCVD on Silicon on Insulator (SOI) substrates in an effort to improve the material quality compared to more traditionally employed sapphire substrates. Their photoluminescence properties are reported and found to exhibit an intense and relatively large PL band around 3.47eV at low temperature (7K). This is about 10meV lower than(More)
Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation current, kink effect and hysteresis effect. The related deep levels are directly characterized by conductance deep level transient spectroscopy (CDLTS) method.(More)
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