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AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al 2 O 3 substrates reveals anomalies on I ds –V ds –T and I gs –V gs –T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current(More)
Silicon nanoparticles (Si NPs) with a diameter size ranging from 4 to 8 nm were successfully fabricated. They exhibit a visible photoluminescence (PL) due to the quantum confinement effect. Chemical functionalization of these Si NPs with alkyl groups allowed to homogeneously disperse them in nonpolar liquids (NPLs). In comparison to most of literature(More)
Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation current, kink effect and hysteresis effect. The related deep levels are directly characterized by conductance deep level transient spectroscopy (CDLTS) method.(More)
ZnSe-GaAs heterostructures are heterovalent semiconductor heterostructures which are almost lattice-matched, and appear in most recently demonstrated blue and blue-green lasers. The large valence band offset present in this heterojunction also hinders holes injection from the III-V substrate into the II-VI active layer. Using photocurrent (PC) measurements(More)
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