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—In this work, we present an original model to explain the accelerated wear-out behavior of irradiated ultra-thin oxides. The model uses a statistical approach to the breakdown occurrences based on a nonhomogeneous Poisson process. By means of our model, we can estimate the number and the time evolution of those damaged regions produced by ion hits that(More)
Aim of this work is to propose a new fast methodology to be applied to thick gate and tunnel oxides in Flash and embedded Flash processes. Starting from the reliability characterization of the dielectric it is possible to define a very short stress (lower than 1-2sec) which correlates with standard long reliability testing procedures (constant voltage(More)