G. Ghidini

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In this work, we present an original model to explain the accelerated wear-out behavior of irradiated ultra-thin oxides. The model uses a statistical approach to the breakdown occurrences based on a nonhomogeneous Poisson process. By means of our model, we can estimate the number and the time evolution of those damaged regions produced by ion hits that(More)
This work studies the reliability behaviour of gate oxides grown by in situ steam generation technology. A comparison with standard steam oxides is performed, investigating interface and bulk properties. A reduced conduction at low fields and an improved reliability is found for ISSG oxide. The initial lower bulk trapping, but with similar degradation rate(More)