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Electrostatic channel extension (ESCE) MOSFET, a transistor with static inversion layer formed by interface fixed charge is fabricated in planar bulk structure down to 20 nm gate-length. The 24 nm gate-length ESCE transistor with current 80 nm gate-length SRAM technology shows the excellent drive currents of 1.0 mA/mum with I<sub>OFF</sub> of 93 nA/mum at(More)
The aim of this study was to evaluate the survival of 395 previously untreated cervical cancer patients with at least one high risk factor following concurrent chemoradiation and to assess the toxicities. Two different chemotherapy regimens were used for concurrent chemoradiation. In the patients with squamous cell carcinoma, 100 mg/m2 of cisplatin was(More)
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