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Floating Gate (FG) semiconductor memories, such as EPROM, EEPROM and Flash, can be of interest for space applications thanks to their high performances in terms of data retention and information density. The most radiation sensitive part of commercial Flash memories is the complex circuitry external to the FG cell array. According to a model for the(More)
—We have addressed the problem of threshold voltage (TH) variation in flash memory cells after heavy-ion irradiation by using specially designed array structures and test instruments. After irradiation, low TH tails appear in TH distributions, growing with ion linear energy transfer (LET) and fluence. In particular, high LET ions, such as iodine used in(More)
pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width:(More)
Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage(More)