G. Cellere

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Single-cell experiments represent the next frontier for biochemical and gene expression research. Although bulk-scale methods averaging populations of cells have been traditionally used to investigate cellular behavior, they mask individual cell features and can lead to misleading or insufficient biological results. We report on a single-cell(More)
Floating Gate (FG) semiconductor memories, such as EPROM, EEPROM and Flash, can be of interest for space applications thanks to their high performances in terms of data retention and information density. The most radiation sensitive part of commercial Flash memories is the complex circuitry external to the FG cell array. According to a model for the(More)
Ion sensitive field effect transistors (ISFET) are candidates for a new generation of fully electrical DNA sensors. To this purpose, we have modified ISFET sensors by adsorbing on their Si(3)N(4) surface poly-L-lysine and single (as well as double) stranded DNA. Once coupled to an accurate model of the oppositely charged layers adsorbed on the surface, the(More)
—We have addressed the problem of threshold voltage (TH) variation in flash memory cells after heavy-ion irradiation by using specially designed array structures and test instruments. After irradiation, low TH tails appear in TH distributions, growing with ion linear energy transfer (LET) and fluence. In particular, high LET ions, such as iodine used in(More)
pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width:(More)
Several process steps (in particular, those requiring the use of plasma) can lead to severe oxide damage. To reduce the latter, a high temperature anneal is usually performed at the end of the manufacturing process. We are investigating the use of deuterium instead of hydrogen for this anneal step. Anneal in deuterium results in improved passivation of the(More)
Floating Gate (FG) nonvolatile memories are based on a tiny polysilicon layer (the FG) which can be permanently charged with electrons or holes, thus changing the threshold voltage of a MOSFET. Every time a FG is hit by a high energy ion, it experiences a charge loss, depending on the ion linear energy transfer (LET) and on the transistor geometrical and(More)