G. Cellere

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Floating Gate (FG) semiconductor memories, such as EPROM, EEPROM and Flash, can be of interest for space applications thanks to their high performances in terms of data retention and information density. The most radiation sensitive part of commercial Flash memories is the complex circuitry external to the FG cell array. According to a model for the(More)
—We have addressed the problem of threshold voltage (TH) variation in flash memory cells after heavy-ion irradiation by using specially designed array structures and test instruments. After irradiation, low TH tails appear in TH distributions, growing with ion linear energy transfer (LET) and fluence. In particular, high LET ions, such as iodine used in(More)
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