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The present paper is dedicated to the use of enriched discretization schemes in the context of digital image correlation. The aim is to capture and evaluate strong or weak discontinuities of a displacement field directly from digital images. An analysis of different enrichment performances is provided. Two examples of strain localization illustrate the(More)
In this paper, we investigate the potential of strained Silicon-On-Insulator for the future advanced CMOS nodes. Strained FDSOI devices not only exhibit a 30% higher performance in term of I<sub>ON</sub>/I<sub>OFF</sub> but also show superior HC reliability at same drive current regardless of the back bias.
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