This paper reviews three modern transistor modeling flows enabled by large-signal waveform and/or X-parameter<sup>1</sup> measurements from a commercially available nonlinear vector network analyzerâ€¦ (More)

Â– An accurate simulation and design was achieved with Computer-Aided-Engineering (CAE) of RF oscillators. Signal and phase noise modeling of all passiveand active components in the RF oscillatorâ€¦ (More)

The paper presents for the first time a practical and relatively simple non-linear modeling solution for /spl mu/-wave PIN diodes for use in harmonic balance (HB) circuit simulators. It enables veryâ€¦ (More)

On the other hand, many modeling engineers still have some problems in understanding the basics of such nonlinear RF modeling. Applying a harmonic balance simulator like Agilent's ADS is a smart wayâ€¦ (More)

A technique for extraction and optimization of silicon substrate parameters is presented. The parameters are optimized to get the best fit between measured and simulated S-parameters for passiveâ€¦ (More)

In today's RF applications, silicon technology is more and more competing with its III/V counterpart. This means that MOS (LDMOS) and bipolar (HBT) transistors are operated under large signalâ€¦ (More)