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A Novel SONOS Structure For Nonvolatile Memories With Improved Data Retention
A SONOS structure with a p+ doped silicon gate instead of the commonly used n+ gate is proposed and investigated. In the erase mode the p+ gate prevents the Fowler Nordheim (FN) tunneling of
Channel flow of smectic films
  • Franosch, Jain, Nelson
  • Physics
    Physical review. E, Statistical physics, plasmas…
  • 2 August 1999
The hydrodynamics of smectic films at an air-water interface is discussed, with particular focus on the viscous response of the film under flow normal to the layers, and the results for the effective viscosity are illustrated.