Frank L. Wei

Learn More
Under similar test conditions, the electromigration reliability of Al and Cu metallization interconnect trees demonstrates significant differences because of the differences in interconnect architectural schemes. In Cu technology, the low critical stress for void nucleation at the Cu and inter-level diffusion barrier, such as Si 3 N 4 , interface, leads to(More)
—Under similar test conditions, the electromigration reliability of Al and Cu interconnect trees demonstrate significant differences because of differences in interconnect architectural schemes. The low critical stress for void nucleation at the Cu and interlevel diffusion-barrier interface leads to varying failure characteristics depending on the via(More)
Electromigration experiments were conducted to investigate the thresholds required for electromigration-induced extrusion failures in Cu/low-k interconnect structures. Extrusions at the anode were observed after long periods of void growth. Characterization of failure sites was carried out using scanning and transmission electron microscopy, which showed(More)
The authors evaluated various dicing methods in order to improve the TCT reliability against SeWaRe type of failures in glass interposers fabricated by polymer lamination over thin glass sheet cores. For blade-based dicing methods, the criteria for down-selection were (i) the least glass sidewall roughness and (ii) crack-free die edge visual inspections. In(More)
— This paper describes the improvement of advanced semi-additive processes (SAP) to demonstrate 1.5-5 µm lines and spaces with 4-5 µm diameter photo-vias for multiple redistribution layers (RDL) at 20 µm bump pitch on glass interposers. High performance computing systems for networking and graphics are driving ultra-high bandwidth interconnections between(More)
  • 1