Franco L. Fiori

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This paper describes a new circuit integrated on silicon, which generates temperature-independent bias currents. Such a circuit is firstly employed to obtain a current reference with first-order temperature compensation, then it is modified to obtain second-order temperature compensation. The operation principle of the new circuits is described and the(More)
A compact, very low voltage, temperature-independent reference circuit, which is based on the thermal properties of bipolar junction transistors in the saturation region is presented. The new circuit operates from a minimum power supply of less than 1V and provides a reference voltage with a nominal thermal drift of 30 ppm/8C in the temperature range(More)
The effect of radio frequency interference (RFI) in MOS and BJT operational amplifiers (opamps) is dealt with; in order to obtain analytical expressions which can be useful for design purposes, a second order circuit analysis has been performed. This approach grants a good insight in the nonlinear mechanisms involved in the RFI induced DC offset shift in(More)
In this paper the susceptibility of integrated bandgap voltage references to Electromagnetic Interference (EMI) is investigated by on-chip measurements carried out on Kuijk and Tsividis bandgap circuits. These measurements highlight the offset in the reference voltage induced by continuous wave (CW) EMI and the complete failures which may be experienced by(More)
In this paper, a novel CMOS Operational Amplifier input stage which is robust to high power electromagnetic interference (EMI) without any significant penalty in baseband performance is presented and its operation principle is discussed. An opamp which includes the new input stage is proposed and it is compared in terms of immunity to EMI with a standard(More)
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