Francisco Javier Ortega-González

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—This letter shows a high-power, high-efflciency, wide-band Class-E RF power amplifier designed upon the load admittance synthesis concept and built using an uncomplicated low-loss load network with a low loss wideband admittance transformer as the main component. It uses a power Silicon LDMOS transistor to provide up to 145 W at 28 V peak power, up to 86 %(More)
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