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Porous silicon thin films were prepared by electrochemical etching of p-type silicon substrates in HF + IPA solutions. A vertical anodisation cell was developed to control the etching procedure with… (More)
Abstract The correlations between the defect density, N D , Fermi energy, E F , and Urbach tail, E O , are examined for rf-sputtered a-Ge:H films p-type doped by aluminum, gallium and indium.… (More)
In this work we report synthesis of the LaYbO3 ceramics material by the solid state reaction technique and its structural and morphological characterization from X-ray diffraction and Scanning… (More)
Introduction. Traditional forms of bullying have changed over time, appearing more specific statements that use the new technologies of information and communication. This new form of abuse is called… (More)