Francesco Maria Puglisi

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This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN). RTN is de ned as an abrupt switching of either the current or the voltage between discrete values as a result of trapping/de-trapping activity. RTN signal properties are deduced exploiting a factorial hidden Markov model (FHMM). The proposed(More)
In this work, we present a multiscale simulation platform as a viable tool to engineer novel electron devices. The tool connects the specific material properties (as atomic defects, interfaces, material morphology) to the electrical behavior of the device, representing a virtual space for the design of novel electrons device purposely exploiting(More)
In this paper, we propose new guidelines for the analysis of random telegraph noise (RTN) in electronic devices. Starting from an in-depth understanding of RTN signal characteristics, we will identify the correct measurement conditions to enable RTN analysis as a characterization tool for electronic devices. The estimate of RTN statistical parameters may(More)
We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices. The model is used(More)