Françoise Delannoy

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p and n GaSb layers have been grown on GaSb and semi-insulating GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD) method ; the lowest doping levels obtained are: p = 2 × 10<sup>16</sup>cm<sup>-3</sup>, n = 8 × 10<sup>15</sup>cm<sup>-3</sup>. P type Ga<inf>1-x</inf>in<inf>x</inf>As<inf>y</inf>Sb<inf>1-y</inf> layers have also been fabricated(More)
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